mmWave Front-Ends

weasic’s RF and mmWave Front-Ends cover a wide range of applications with frequencies ranging from 1GHz up to 170GHz. With our longstanding experience we are able to provide the best performing transceivers and RF amplifiers for any application with even the most stringent specs. weasic’s IP protfolio includes silicon proven transceivers fabricated in the state of the art 45nm, 22nm SOI and 60nm SiGe processes and can be easily ported and customized to serve the development of transceivers for 5G communications, SatCom, Mobile Backhaul, RADAR sensors and 802.11.* applications.

WEA2630F45
WEA2630P45
WEA2630L45
WEA7186F55
WEA7681T22
WEA7681R22
WEA7681P22
WEA7681L22
WEA130170P55
WEA130170L55
WEA1015T13
WEA1015R13
WEA1015L13
WEA1015P13
WEA2630F45

5G Front-End Module 26-30GHz
The WEA2630F45 is a high-performance RF front-end module designed for 5G mobile terminals. The front-end combines a low noise high linearity LNA, a low insertion-loss, high-isolation TR switch, a high-efficiency PA, a Power Detector and a Temperature Sensor with ADCs and a SPI. The WEA2630F45 is powered from a single 3.6V supply and the biasing is generated with an on-chip bandgap reference voltage. The receive path (LNA+SW) is designed to provide 18dB of gain and a noise figure less than 4dB. The transmit path (PA+SW) provides saturated output power of 18dBm. The WEA2630F45 is fabricated on GlobalFoundries 45RFSOI process occupying a total silicon area of 1.5mm2.

Features
Integrated LNA, PA, SW, PD, TS, ADC, SPI
Frequency range 26GHz-30GHz
Tx PAE = 23% at 18 dBm Output Power
18dBm Tx Output 1dbCP
Rx Noise Figure < 4dB, including Switch
18dB Rx Gain
0dBm Rx Input Referred IP3
3.6V Supply Voltage

Applications
5G mm-Wave Terminals and Infrastructure
Microwave Backhaul

WEA2630P45

Power Amplifier 26-30GHz
The WEA2630P45 is an integrated power amplifier designed for Microwave Backhaul,5G Communications and mm-Wave Wireless Phase Arrays receiver applications. The WEA2630P45 operates between 26 and 30GHz and is powered from 1.5V and 3V supplies. The WEA2630P45 provides saturated output power of 18 dBm. The WEA2630P45 is fabricated on GlobalFoundries 45RFSOI process occupying a total silicon area of 1.3mm x 1.5mm.

Features
Integrated Matching Network
Integrated Inductors
IDC:13mA
IOF:0. 1mA
1.5 V and 3.0V Supply Voltage
Frequency range 24GHz-30GHz
TX PAE = 20% at 18 dBm Output Power
16 dBm TX Output 1dB Compression Point
Area: 1.3mm x 1.5mm

Applications
Microwave Backhaul
5G Communications
mm-Wave Wireless Phase Arrays

WEA2630L45

Low-Noise Amplifier 26-30GHz
The WEA2630L45 is an integrated low-noise amplifier designed for Microwave Backhaul,5G Communications and mm-Wave Wireless Phase Arrays receiver applications. The WEA2630L45 operates between 26 and 30GHz with a signal gain of 18 dB, noise figure of 2.9 dB and current consumption 35 mA from 1.5V supply. The WEA2630L45 is fabricated on GlobalFoundries 45RFSOI process occupying a total silicon area of 1.6mm x 1.5mm.

Features
Small signal gain: 18 dB
Low noise figure: 2.9 dB
Current consumption: 35 mA @ 1.5 V
Shut-down current: 0.8 mA
Input/output impedance internally matched to 50 Ω
3.2dBm RX Input Referred IP3
Single DC supply: 1.5V
Area:1.6 x1.5mm

Applications
Microwave Backhaul
5G Communications
mm-Wave Wireless Phase Arrays

WEA7186F55

E-Band Front-End Module 71-86GHz
The WEA7186F55 is a front end for wireless microwave transceivers operating in the E-Band. Implemented in a ST Micro Silicon Germanium B55 process. The WEA7186F55 integrates a LNA path, a Power Amplifier together with Bias and Gain Control blocks.

Features
Linear-in-dB Analog Gain Control
Broadband Gain Flatness
Transmit Power Control
Programmable Bias
20dBm output power
>30dB TPC
< 6dB NF
30GHz +/-2dB BW

Applications
Wireless Microwave Transceivers

WEA7681T22

Transmitter 76-81GHz

WEA7681R22

Receiver 76-81GHz

WEA7681P22

Power Amplifier 76-81GHz
The WEA7681P22 is an integrated power amplifier designed for Microwave Backhaul,5G Communications and mm-Wave Wireless Phase Arrays receiver applications. The WEA7681P22 operates between 76 and 81 GHz and is powered from 1.5V and 3V supplies. The WEA7681P22 provides saturated output power of…dBm. The WEA7681P22 is fabricated on GlobalFoundries 22FDX process occupying a total silicon area of 1.3mm x 1.5mm.

Features
Integrated Matching Network
Integrated Inductors
IDC:13mA
IOF:0. 1mA
1.5 V and 3.0V Supply Voltage
Frequency range 76GHz-81GHz
TX PAE = 20% at 18 dBm Output Power
9 dBm TX Output 1dB Compression Point
Area: 1.3mm x 1.5mm
Programmable BIAS

Applications
Microwave Backhaul
5G Communications
mm-Wave Wireless Phase Arrays

WEA7681L22

Low-Noise Amplifier 76-81GHz
The WEA7681L22 is an integrated low-noise amplifier with Gain Control block designed for Automotive Radar and mm-Wave Wireless Phase Arrays receiver applications. The WEA7681L22 operates between 76 and 81GHz with a signal gain of 8dB and noise figure of 6.5 dB from 1.5V supply. The WEA7681L22 is fabricated on GlobalFoundries 22FDX process occupying a total silicon area of 400um x 125um.

Features
Small signal gain: 8 dB
Noise figure: 6.5 dB
IDC:13mA
IOF:0.2mA
-7dBm RX Input Referred IP3@max gain
Single DC supply: 1.5V
16 steps gain control,1dB step
Area:400x125um

Applications
Automotive Radar
mm-Wave Wireless Phase Arrays

WEA130170P55

Power Amplifier 130-170GHz
The WEA130170P55 consists of four cascaded differential amplifying stages. The first three stages are cascode stages,while the final one is a common emitter stage. Transformers are used as matching networks between the stages. An output balun is used to transform the final stage differential output to a single ended. The scaling of the devices maximize the power amplifier’s linearity performance.

Features
Gain:24dB
NF:12.6dB@170GHz
OIP3:16.2dBm
1Dbocp:6.5dBm
PAE@0dBm:0.41%
PAE@1dBCP:1.8%

Applications
Microwave Backhaul
5G Communications

WEA130170L55

Low-Noise Amplifier 130-170GHz

WEA1015T13

Microwave Transmitter Front-End
The WEA1015T13 is a complete broadband wireless microwave transceiver front-end operating in the frequency band spanning from 10 GHz to 15 GHz. Implemented in a GF Silicon Germanium 8XP process it integrates an up-converter mixer, a two stage PA driver with Gain Control, an IQ LO driver an envelope detector and a bandgap reference.

Features
Signal Envelope Detector
Linear-in-dB Continuous Gain Control
Broadband Baseband Bandwidth
Transmit Power Control Function
Programmable Bias

Applications
Microwave Backhaul
Satellite Communications

WEA1015R13

Microwave Receiver Front-End
The WEA1015R13 is a complete broadband wireless microwave receiver front-end operating in the frequency band spanning from 10 GHz to 15 GHz. Implemented in a GF Silicon Germanium 8XP process it integrates a Low Noise Amplifier with Gain Control, an IQ mixer, an IQ LO driver and BroadBand Baseband Amplifiers.

Features
Linear-in-dB Continuous Gain Control
300MHz Baseband Bandwidth
Programmable Bias

Applications
Microwave Backhaul
Satellite Communications

WEA1015L13

Low-Noise Amplifier 10-15GHz
The WEA1015L13 is a Microwave Monolithic Integrated circuit front-end Low-Noise Amplifier designed for Global Positioning System/Global Navigation Satellite System receiver applications. The WEA1015L13 provides high linearity, good gain and a low 2.2dB noise figure at 12GHz. The WEA1015L13 is fabricated using the SiGe BiCmos technology. The WEA1015L13 covers a wide frequency range from 10 GHz to 15 GHz.

Features
Small signal gain: 15 dB
In-band IIP2: 51.8 dBm
In-band IIP3: 4.1 dBm
ICP1dB: -20 dBm
Low noise figure:2.2 dB@12GHz
Dissipation: 231.1 mA @ 2.6 V
Differential impedance :100 Ω
DC supply: 2.6 V

Applications
GPS/GLONASS/Galileo/BDS radio receivers
Smartphones
Tablet/laptop PCs
Personal navigation devices

WEA1015P13

Power Amplifier 10-15GHz

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